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| AP9973H/J Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 80m 14A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9973J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 20 14 9 40 27 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit /W /W Data and specifications subject to change without notice 2001023031 AP9973H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.05 8.6 8 3 4 7 15 16 3 720 77 45 Max. Units 80 100 3 1 25 100 13 1150 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A VGS=4.5V, ID=6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= 20V ID=9A VDS=48V VGS=4.5V VDS=30V ID=9A RG=3.3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=14A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 27 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP9973H/J 45 32 40 o T C =25 C 35 ID , Drain Current (A) 30 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 28 T C =150 o C 24 10V 7.0V 5.0V 4.5V 20 25 16 20 12 15 8 V G =3.0V 10 V G =3.0V 4 5 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 2.5 ID=9A 85 I D =9A 2.0 T C =25 C Normalized RDS(ON) o V G =10V RDS(ON) (m ) 80 1.5 75 1.0 70 0.5 65 0.0 3 5 7 9 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 14 12 2 10 8 IS(A) o T j =150 C 6 T j =25 o C VGS(th) (V) 1.4 1.5 1 4 0.5 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973H/J f=1.0MHz 12 10000 ID=9A VGS , Gate to Source Voltage (V) 10 8 6 4 C (pF) V DS =48V V DS =38V V DS =30V 1000 Ciss 100 Coss Crss 2 0 10 0 4 8 12 16 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thjc) Duty factor=0.5 1ms 10 0.2 ID (A) 0.1 0.1 0.05 10ms 1 PDM 0.02 T C =25 o C Single Pulse 0.1 0.1 1 10 100ms 1s DC t T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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